byv26 document number 86040 rev. 1.6, 14-apr-05 vishay semiconductors www.vishay.com 1 949539 ultra fast avalanche sinterglass diode features ? glass passivated junction hermetically sealed package very low switching losses low reverse current high reverse voltage lead (pb)-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications switched mode power supplies high-frequency inverter circuits mechanical data case: sod-57 sintered glass case terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 369 mg parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part type differentiation package byv26a v r = 200 v; i fav = 1 a sod-57 byv26b v r = 400 v; i fav = 1 a sod-57 byv26c v r = 600 v; i fav = 1 a sod-57 byv26d v r = 800 v; i fav = 1 a sod-57 byv26e v r = 1000 v; i fav = 1 a sod-57 parameter test condition part symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics byv26a v r = v rrm 200 v byv26b v r = v rrm 400 v byv26c v r = v rrm 600 v byv26d v r = v rrm 800 v byv26e v r = v rrm 1000 v peak forward surge current t p = 10 ms, half sinewave i fsm 30 a average forward current i fav 1a non repetitive reverse avalanche energy i (br)r = 1 a, inductive load e r 10 mj junction and storage temperature range t j = t stg - 55 to + 175 c e2
www.vishay.com 2 document number 86040 rev. 1.6, 14-apr-05 byv26 vishay semiconductors maximum thermal resistance t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition symbol value unit junction ambient l = 10 mm, t l = constant r thja 45 k/w parameter test condition part symbol min ty p. max unit forward voltage i f = 1 a v f 2.5 v i f = 1 a, t j = 175 c v f 1.3 v reverse current v r = v rrm i r 5 a v r = v rrm , t j = 150 c i r 100 a reverse breakdown voltage i r = 100 a byv26a v (br)r 300 v byv26b v (br)r 500 v byv26c v (br)r 700 v byv26d v (br)r 900 v byv26e v (br)r 1100 v reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a byv26a- byv26c t rr 30 ns byv26d- byv26e t rr 75 ns figure 1. max. reverse power dissipation vs. junction temperature 0 40 80 120 160 0 100 200 300 400 600 p - maximum reverse power dissipation (mw r t j C junction temperature ( c) 200 95 9728 500 v r =v rrm r thja = 100 k/w 200v 1000v 400v 600v 800v r thja =45k/w figure 2. max. reverse current vs. junction temperature 0 40 80 120 160 200 95 9729 1 10 100 1000 i - reverse current ( a) r t j C junction temperature ( c) v r =v rrm
byv26 document number 86040 rev. 1.6, 14-apr-05 vishay semiconductors www.vishay.com 3 package dimensions in mm (inches) figure 3. max. average forward cu rrent vs. ambient temperature figure 4. max. forward current vs. forward voltage 0 40 80 120 160 0 0.2 0.4 0.6 0.8 1.2 t amb - ambient temperature ( c) 200 95 9730 1.0 r thja = 100 k/w r thja =45k/w i - average forward current ( a ) fav 0.001 0.01 0.1 1 10 95 9731 i - forward curren t(a) f v f - forward voltag e(v) t j =25 c t j =175 c 1 07 23566 figure 5. diode capacitance vs. reverse voltage figure 6. diode capacitance vs. reverse voltage 0 5 10 15 20 25 30 35 40 16380 f=1mhz byv26c 0.1 1 10 100 v - reverse voltag e(v) c - diode capacitance ( pf ) d r 16381 f=1mhz byv26e 0 5 10 15 20 25 30 35 40 0.1 1 10 100 v - reverse voltag e(v) c - diode capacitance ( pf ) d r cathode identification 0.82 (0.032) max. sintered glass case sod-57 94 9538 26(1.014) min. 26(1.014) min. iso method e 3.6 (0.140)max. 4.0 (0.156) max.
www.vishay.com 4 document number 86040 rev. 1.6, 14-apr-05 byv26 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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